发明名称 |
Silicon carbide coating process. |
摘要 |
<p>A method for forming a silicon carbide coating on a carbonaceous substrate or a dual coating in a single reaction with an inner base coating of silicon carbide and an outer coating of a monocarbide. The substrate is immersed in a molten bath of silicon metal and an acid soluble metal at a critical minimum temperature of at least 1550 DEG C. <IMAGE></p> |
申请公布号 |
EP0492436(A2) |
申请公布日期 |
1992.07.01 |
申请号 |
EP19910121784 |
申请日期 |
1991.12.19 |
申请人 |
UCAR CARBON TECHNOLOGY CORP. |
发明人 |
SARA, RAYMOND VINCENT |
分类号 |
C04B41/45;C04B41/50;C04B41/52;C04B41/81;C04B41/87;C04B41/89;D01F11/12;D06M11/00;D06M11/77;D06M11/83;D06M101/00;D06M101/40 |
主分类号 |
C04B41/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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