| 摘要 |
PURPOSE:To enable a capacitor large in capacitance to be obtained by a method wherein a bit line is surrounded with an insulating film, a columnar single crystal silicon region including a switching transistor region is formed thereon through the intermediary of the insulating film, and a capacitor is provided to the top and the side face of the single crystal silicon region. CONSTITUTION:A conductive layer 53 which functions as a bit line is provided onto an oxide film 52, an oxide film 54 is formed thereon, a contact hole 55 is provided to the film 54, a single-crystal silicon 56 processed into a column is formed just above the contact hole 55, a gate oxide film 57 and a gate electrode 58 are formed on the side face of the single-crystal region 56, and an N<+> source diffusion layer 62 and an N<+> drain diffusion layer 63 are provided to the upper part and the lower part of the single-crystal region 56. This switching transistor region is surrounded with an insulating film 59, and a capacitor composed of a storage node region 61, a dielectric thin film 64, and a cell plate electrode 65 is formed above and around the single-crystal region 56. |
