| 摘要 |
PURPOSE:To improve the efficiency of etching and ashing processes, by installing a load lock chamber, and making at least one of substrate processing chambers have isotropic plasma etching function and resist ashing function. CONSTITUTION:A semiconductor wafer 1 is aligned at an alignment part 14, and then subjected to specified processing by a processing part 15, in which the following two systems are provided; an in-side load lock chamber 23 capable of carrying wafers 1 while keeping airtight in a first processing chamber 22 for etching process, and an intermediate load lock chamber 24. A second processing chamber 25 is connected with the chamber 24. In the chamber 25, the wafers 1 after processing in the chamber 22 are subjected to processing like isotropic etching and resist ashing. Thereby etching process and resist ashing process, which is the next process, can be performed by a single equipment, without exposing the wafers 1 to the air. Hence the processing yield of wafers is improved, and the installation area efficiency of equipments and the like also can be increased. |
