| 摘要 |
1291450 Semi-conductor devices WESTERN ELECTRIC CO Inc 21 Nov 1969 [22 Nov 1968] 56973/69 Heading H1K An insulating guard ring 12 defining the periphery of a planar rectifying barrier in a semiconductor device is formed by bombardment with ions to a depth beyond that of the rectifying barrier so as to convert the bombarded semi-conductor material to insulating material. Suitable ions for use with Si, Ga or III-V compounds are oxygen, nitrogen, carbon or mixtures thereof. The barrier may be a metal/ semi-conductor contact (e.g. Al on Si, Pd on Ge or Au on GaAs) or a contact between Si and a silicide of a metal such as Ni, Ti, Zr, Hf or a Pt-group metal, where the silicide is produced by heating after depositing a layer of the appropriate metal. In the latter case a localized area of the silicide (52), Fig. 5 (not shown), is then covered by a masking layer (54) of metal such as Al, Ti, Zr, Pt-Ti-Au or Cr-Au, and the entire surface is subjected to bombardment, e.g. with oxygen ions, to form an oxide region extending to a level (55) in the Si body deeper than the remaining silicide/Si interface (53). The surface of the metal layer (54) is similarly converted to an oxide. In the embodiment shown the rectifying barrier is a planar PN junction produced by epitaxial growth from the gas phase, sputtering or liquid regrowth or by diffusion or ion implantation. The insulating guard ring 12 is then formed by ion implantation. Optionally a further insulating ring 23 may be formed simultaneously within the ring 12, and further implantation of N-type impurities such as P or As may then be effected in the central area enclosed by the ring 23 to allow electrical contact 25 to be made to the lower semi-conductor region 11 from the upper surface of the device. |
