| 摘要 |
<p>A method of providing a perovskite film having a general chemical formula of ABO3 over a substrate includes the steps of providing (42,44,46,48,50,52) a sol-gel solution of composition of A and B using alkoxides in organic salts and depositing (54) the sol-gel solution as a thin film over the substrate . The film is converted into the perovskite film by rapidly heating (56) the thin film. Preferred perovskite materials include lead zirconate titanate. In one embodiment the films are deposited from sol-gel solutions containing lead, zirconium, and titanium and are converted (58) to a lead zirconate titante crystalline material in an atmosphere of oxygen to provide a ferroelectric dielectric having a high remanent polarization. In an alternate embodiment (Fig. 3), the sol-gel solution of lead, zirconium, and titanium is converted (62) to lead zirconate titanate crystalline material in a non-oxidizing atmosphere of an inert gas, nitrogen, or forming gas to provide materials having high dielectric constants and high and substantially linear dielectric constants with respect to applied voltages. <IMAGE></p> |
