发明名称 PRESSURE-CONTACT TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To uniformly exert a pressure-contact force, to stabilize the operating characteristic of a semiconductor element and to enhance the reliability of a device by a method wherein a flexible insulating sheet is inserted between a metal base sheet and a pressure-contact electrode or between pressure-contact electrodes and the insulating sheet is fixed and bonded to members on the partner side by using an adhesive. CONSTITUTION:At a pressure-contact type semiconductor device, pressure-contact electrodes 3, 4 for external connection use are mounted side by side, via insulators, on a metal base sheet 2 on which semiconductor elements 1 have been mounted and the pressure-contact electrodes 3, 4 are wire-bonded to terminals of the semiconductor elements 1. At the semiconductor device, flexible insulating sheets 5, 6 as said insulators are inserted between the metal base sheet 2 and the pressure-contact electrode 3 or between the pressure-contact electrodes 3, 4, and the insulating sheets 5, 6 are fixed and bonded to members on the partner side by using an adhesive 7. For example, source and gate pressure-contact electrodes 3, 4 are mounted so as to be piled up collectively on the central part of a metal base sheet 2 on which a plurality of semiconductor elements 1 have been mounted so as to be dispersed, and insulating sheets 5, 6 by a polyester film, a polyimide film or the like are inserted between them via an adhesive 7.
申请公布号 JPH04152558(A) 申请公布日期 1992.05.26
申请号 JP19900277451 申请日期 1990.10.16
申请人 FUJI ELECTRIC CO LTD 发明人 FURUHATA SHOICHI
分类号 H01L23/52;H01L23/48 主分类号 H01L23/52
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