| 摘要 |
PURPOSE:To evade the transfer of defects of original plates by performing multiple exposure by using >=2 original plates for the formation of one image. CONSTITUTION:A 1st original plate (having a defect or Cr absence) is used to perform exposure by nearly a half as much as the exposure quantity required for image formation on photoresist 4 on a semiconductor substrate 6 coated with the photoresist 4 and another original plate is used to perform exposure by nearly a half as much as the exposure quantity required for the image formation. Consequently, the transfer of white absence such as Cr absence is prevented. Then the semiconductor device 6 which is exposed by using the latter original plate is further exposed. Therefore, the transfer of a black defect due to dirt and dust can be precluded. Consequently, even when an original plate on which whether or not there is a defect can not be found is used, a resist image which is originally required can be formed. |
