发明名称 |
Method for production of a dielectric-separation substrate. |
摘要 |
<p>After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and polished until the oxide film in the area other than the separating grooves is exposed, the present invention etches the polycrystalline silicon layer on the separating grooves with mixed acid composed of hydrofluoric acid and nitric acid until its thickness equals that of the separating oxide film and subsequently removes the oxide film in the area other than the separating grooves with hydrofluoric acid. As a result, the otherwise inevitable occurrence of projections of polycrystalline silicon can be precluded. When the dielectric-separation substrate obtained by the present invention is used in manufacturing a semiconductor device, therefore, the occurrence of particles due to the chipping of the projections of polycrystalline silicon and the breakage of distributed wires in the produced device can be prevented.</p> |
申请公布号 |
EP0486201(A2) |
申请公布日期 |
1992.05.20 |
申请号 |
EP19910310218 |
申请日期 |
1991.11.05 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY, LIMITED |
发明人 |
OHKI, KONOMU;OHTA, YUTAKA;KATAYAMA, MASATAKE |
分类号 |
H01L21/3213;H01L21/76;H01L21/762;H01L21/763 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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