发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate that a bird's beak is produced and to prevent an exfoliation at an interface by a method wherein an oxide film is formed in a state that the boundary part between a first polycrystalline silicon film and a metal silicide film is covered with a second polycrystalline silicon film. CONSTITUTION:A first polycrystalline silicon film 14 and a metal silicide film 15 are formed and patterned; after that, an oxide film is formed directly on their surface. At this time, the boundary part between the first polycrystalline silicon film 14 and the metal silicide film 15 is exposed to an oxidizing atmosphere, a bird's beak is produced and an exfoliation is caused at an interface. However, the boundary part is covered with a second polycrystalline silicon film 17 and an oxide film 18 is formed in a state that the part is not exposed to the oxidizing atmosphere. Thereby, it is possible to avoid such a situation. Thereby, it is possible to prevent the bird's beak from being produced and to enhance a production yield and reliability.
申请公布号 JPH04142036(A) 申请公布日期 1992.05.15
申请号 JP19900264874 申请日期 1990.10.02
申请人 TOSHIBA CORP 发明人 TOZONO MASAYOSHI;KODAIRA YASUNOBU;SHINO KATSUYA
分类号 H01L21/3205;H01L21/285;H01L21/336;H01L21/768;H01L21/8234;H01L23/52;H01L27/088;H01L29/78 主分类号 H01L21/3205
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