发明名称 APPARATUS FOR DEPOSITING MATERIAL INTO HIGH ASPECT RATIO HOLES
摘要 <p>A sputter deposition system includes a hollow, cylindrical sputter target (14) disposed between an end sputter target (12) and a substrate (19), all of which are contained in a vacuum chamber (20). A plurality of magnets (24) are disposed outside the chamber (24) to create intense, plasma regions (48) near the interior surface of the cylindrical target (14) and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber (24) through rf coil (16) to sustain the plasma and substrate (19) is electrically biased to control ion directionality and energy.</p>
申请公布号 WO1992007969(A1) 申请公布日期 1992.05.14
申请号 US1991000540 申请日期 1991.01.25
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