| 摘要 |
PURPOSE:To obtain a thin-film P-type conductor, a thin-film of which has conductivity of a specific value or more, by thermally annealing the germanium thin-film having amorphous phase carefully. CONSTITUTION:The title conductor is manufactured through a method, in which a CVD method and a thermal annealing method are combined. An infrared heating furnace (an IR furnace) on the market is used for thermal annealing treatment. Samples, on which crystallite-changed germanium films deposited by employing the CVD method are deposited, are arrayed in a sample holder in the IR furnace. Thin-film electrodes capable of monitoring resistivity are formed at both end sections of the samples at that time. The samples are heated and temperatures thereof are elevated at a specified temperature-rise rate in the IR furnace, held in a short time at an annealing temperature set, and temperatures thereof are lowered quickly. The resistivity and temperatures of the samples are measured as occasion demands respectively through a lead 10, an ohmmeter 11, a thermocouple 12 and a voltmeter 13 at that time, and transferred to a personal computer 14 successively. The temperature-rise rate, set annealing temperature, temperature-drop rate, etc., of the samples are controlled by a thermocouple 15 and an IR-furnace temperature controller 16. Accordingly, the conductivity of the germanium thin-film P-type conductor formed has at least 1S.cm<-1>, and the temperature coefficient of conductivity is 0.5%/K or less. |
