| 摘要 |
<p>PURPOSE:To minimize defective picture elements and hence improve the yield by interlayer-isolating a gate electrode from a bus line, and a drain electrode from a bus line, a source electrode from a picture element electrode by way of an insulation film respectively. CONSTITUTION:A chrome gate electrode 1 and a chrome gate bus line 2 connected with the gate electrode 1 are formed on a translucent insulation substrate 10. After the formation of a first insulation film 11 with SiNx, a chrome drain electrode 3 and an n<+> layer 8 of a thin chrome film are formed. Then, the layer 8 is patterned, thereby forming the electrode 3 and a chrome drain bus line 4. A thin film which forms a channel section is formed, thereby forming an island 5. Then, a second insulation film 12 is formed with SiNx to isolate the drain from the source and a second n<+> layer 9 and a thin chrome film are formed continuously, thereby forming a chrome source electrode 6. Then, an ITO picture element electrode 7 is formed. This construction makes it possible to interlayer-isolate the chrome source electrode, the drain electrode, and the source electrode completely, minimize the generation of defective picture elements and hence enhance the yield.</p> |
