| 摘要 |
<p>PURPOSE:To increase the number of the lead wirings of a semiconductor device and to improve the integration degrees of first and second semiconductor chips by a method wherein the external terminals of the second semiconductor chip are connected to the rears to oppose to the surfaces of the lead wirings interposing bump electrodes between the lead wirings and the second semiconductor chip. CONSTITUTION:A first semiconductor chip 5A having an element formation pattern and a second semiconductor chip 5B having an element formation pattern formed in a mirror inverted pattern to the element formation pattern of this chip 5A are constituted. An external terminal 8 of the chip 5A is connected to the surface of a lead wiring 3a interposing a bump electrode 6 between the lead wiring 3a and the chip 5A. An external terminal 8 of the chip 5A is connected to the rear to oppose to the surface of this lead wiring 3a interposing a bump electrode 6 between the lead wiring 3a and the chip 5B. By this constitution, the respective external terminals 8 of the chips 5A and 5B are connected to the surface and rear of the wiring 3a interposing the electrodes 6 between the wiring 3a and the chips 5A and 5B and one lead wiring 3a can be used in common to the chips 5A and 5B. As a result, the number of the lead wirings 3a of a semiconductor device 1 can be increased.</p> |
