DYNAMIC SEMICONDUCTOR STORE WITH READ AMPLIFIER TUNING CIRCUIT TO OBTAIN SHORT ACCESS TIMES AT A LOW TOTAL PEAK CURRENT

摘要

The invention relates of a dynamic semiconductor store which can be divided into word and bit line blocks in which word line blocks consist of a plurality of bit line blocks, has a local SAN driver (LTN) and an acceleration circuit to tune the read amplifier (LV1...LVi) belonging to the bit line block concerned per bit line block, the acceleration circuits of which can be tuned to that, to obtain a low total peak current, only that acceleration circuit is active which belongs to the bit line block whose bit lines are connected to I/O lines (IO, ION). The acceleration circuit consists, for example, only of one driver transistor (NTn+1).