| 摘要 |
<p>A distortion sensor for detecting distortion by utilizing a correlation with the electric resistance of a non-single-crystal semiconductor containing silicon. The distortion sensor of the invention is composed of a non-single-crystal semiconductor, including silicon, whose activation energy of dark conductivity is smaller than 15meV. The distortion sensor of the invention can be used for measuring distortion even under the conditions of a relatively great magnetic field.</p> |
