THIN AMORPHOUS FILM SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain an amorphous semiconductor whose electric properties do not deteriorate by the long time irradiation of light by irradiating the semiconductor with high including visible light with high illumination intensity intermittently in an atmosphere of a temperature higher than a specified temperature. CONSTITUTION:This device prepares a silicon group amorphous semiconductor thin film by an ordinary method wherein a silane gas or its mixed gas is used as a raw gas and the ratio of heavy hydrogen atoms to light hydrogen atoms contained in the raw gas is specified as 1:99 or more and preferably 10:90 or more. Then, light pulses of 10N/cm<2> are applied to the film in an atmosphere of a temperature lower than 100 deg.C. The pulse width is less than 1/100sec. This construction makes it possible to obtain an amorphous silicon group semiconductor suitable to a solar cell and a light senser which less deteriorates by light irradiation.