| 摘要 |
PURPOSE:To enable epitaxial growth of a high temperature superconductor on a semiconductor oxide by injecting accelerated particles into a semiconductor substrate, by carrying out heat treatment, by forming an insulating layer inside the semiconductor substrate, by forming a semiconductor layer on the insulating layer, and by forming a polycrystalline or single crystalline layer having a fixed orientation to crystal orientation of the semiconductor layer. CONSTITUTION:Ion implantation of oxygen ion, for example, is performed for an Si substrate 1 while heating the substrate 1. After a cap film consisting of SiO2 is formed on the substrate 1, an insulating layer 2 consisting of SiO2 is formed inside the substrate 1 by chemical bond between an oxygen particle and the substrate 1 by carrying out annealing for 3 hours in nitrogen atmosphere, and a semiconductor layer 3 is also formed on the insulating layer 2. In the process, three-layer structure of SIMOX structure which is provided with the insulating layer 2 and the semiconductor layer 3 inside the substrate 1 is formed. Then, a cap film is removed. Thereafter, Y, Ba, Cu are attached onto the semiconductor layer 3 by vapor deposition, etc., in oxygen plasma to acquire a high temperature superconductor film 4 which consists of YBa2Cu3 O7-x of a film thickness of 0.3mum, for example.
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