THERMOELECTRIC SEMICONDUCTOR MATERIAL AND METHOD OF PRODUCING THE SAME.

摘要

A thermoelectric semiconductor material of the invention is constituted of a sinter of a solid solution powder of bismuth telluride (Bi2Te3) - antimony telluride (Sb2Te3) or bismuth telluride (Bi2Te3) - antimony telluride (Sb2Te3) - antimony selenide (Sb2Se3) having a uniform particle size obtained by mixing together bismuth, antimony, tellurium, selenium and impurities of one conductivity type at desired composition, heating and melting the mixture, quenching the mixture to form an ingot thereof, pulverizing it to have a uniform particle size, and sintering it under pressure. Therefore, a thermoelectric element thus formed has high mechanical strengths and good characteristics.