| 摘要 |
PURPOSE:To enable the titled element of low breakdown voltage capable of the easily setting and controlling of the breakdown voltage by a method wherein an impurity-diffused poly Si layer is provided on a through diffused region having a conductivity type reverse to that of an opitaxial island region and passing through a diffused region. CONSTITUTION:The through diffused-region 26 of P<+> type high impurity concentration passes through an N<-> type epitaxial island region 22 and a diffused region of P type high impurity concentration which are epitaxially grown on an Si substrate 20 and isolated in island form by P<+> type isolation diffused regions 23 and 24. The N type imprity diffused poly Si layer 3 is provided on this diffused region 26. Thereby, breakdown generates in the P-N junction plane 31 between the diffused region 26 and an impurity layer 33, and the breakdown in the surface is inhibited. Besides, the breakdown voltage can be made very low. |
