发明名称 ARRAY SEMICONDUCTOR LASER EXCITATION SOLID-STATE LASER DEVICE
摘要 PURPOSE:To enable end excitation which was difficult with an array semiconductor laser by condensing and laminating each stripe light together at one place, which is made parallel by an array distribution refraction factor lens for making each stripe light of an array semiconductor laser parallel and by arranging an asphere lens which is used as a focusing lens for end excitation of a solid- state laser element. CONSTITUTION:An Nd:YAG is used as a solid-state laser element 4. Dichroic coating is performed for one end surface and a resonator is formed using the surface as an excitation surface together with an output mirror 5. The used array semiconductor laser 1 consists of an array wherein 20 active layer stripes 7 of a width of 100mum arranged at an interval of 500mum. An array distribution refraction factor lens 2 as a condensing lens array consists of 20 distribution refraction factor lenses of a width of 500mum, and condenses and parallels each projection light from 20 stripes. Then, 20 laser beams are focused by an aspheric surface 3 and laminated at one place for end excitation of an Nd:YAG laser rod.
申请公布号 JPH0478179(A) 申请公布日期 1992.03.12
申请号 JP19900190499 申请日期 1990.07.20
申请人 NIPPON STEEL CORP 发明人 IMAI HIROFUMI;YAMAGUCHI SATORU
分类号 H01S3/094 主分类号 H01S3/094
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