| 摘要 |
A method of manufacturing a bipolar transistor (1) with semi-self-aligned p<+> base contacts (27,27a). A base p-type region (28) is formed in a surface region of an n-type region 5 comprising a collector. An element (29) of, for example, n<+> doped polycrystalline silicon, and comprising an emitter, is formed on the surface in contact with the base region (28). The base contacts (27,27a) are formed by implantation and using the element (29) as a mask. An n<+> collector contact (25) is made to the n-type region (5). |
