| 摘要 |
A heterojunction bipolar, push-pull transistor includes a substrate, a first bipolar transistor region including a first collector layer, a first base layer and a first emitter layer disposed over said substrate and a second bipolar transistor region including a second collector layer, a second base layer and a second emitter layer disposed over said first bipolar transistor region. The transistor further includes a first base electrode coupled to said first and second base layers, a first emitter electrode coupled to said first and second emitter layers, and a first collector electrode coupled to said second collector layer.
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