SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device having a folded bit line structure (16a, 16b), in which a field oxide film (2) is formed on both sides of a channel region (11) of a transfer gate, a groove isolation region 12 for defining a memory cell region is formed to surround the field oxide film 2, and the side walls of the groove isolation region 12 include a memory cell utilized as a capacitor for storing charges as information.