| 摘要 |
A structure is formed on an electronic integrated circuit by altering the electrical characteristics of a diffused region of a substrate through a contact hole (window) in an insulating layer, in proportion to the size of said contact hole, such that the resistance of the diffused region is changed in a known and predictable fashion and may be measured electrically, giving indirect but accurate evidence of contact size in a completely nondestructive fashion. The measurements may be made on completed devices. Method and structure are disclosed.
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