| 摘要 |
<p>The film thickness is increased of at least a portion of word lines over which a storage node electrode of the capacitor for storing charges extends in a DRAM having word lines, bit lines and memory cells comprising one transistor and one stacked capacitor for charge storage. This increases the surface area of the storage node electrode, therefore, the opposing areas of the storage node electrode and the cell plate electrode of the capacitor for storing charges. The storage capacity is increased without imposing additional burden on processibility. <IMAGE></p> |
