| 摘要 |
PURPOSE:To form locally a silicon film at a given portion at a high film-forming rate, by irradiating CO2 laser light to a substrate being placed in a source gas atmosphere at a low angle and by irradiating Ar<+> laser light to a portion of the substrate being irradiated by the CO2 laser light at an approximately right angle. CONSTITUTION:CO2 laser light 2 is irradiated at a low angle theta to a substrate 1 which is being placed in a SiH4 source gas atmosphere and Ar<+> laser light 4 which is focused by a lens 3 is irradiated near the beam center at which the CO2 laser light 2 has the most intense strength. In this way, on the surface portion of the substrate 1 which is being irradiated by the beam center and the vicinities with the most intense strength of CO2 laser light 2, the source gas can be decomposed most efficiently and thus the resulted temperature rise of the substrate 1 can form a film efficiently. Moreover, since the energy of the CO2 laser light 2 is not absorbed by the substrate owing to the low angle incidence, the substrate 1 can be heated locally by the focused Ar<+> laser light 4. |
