发明名称 |
Semiconductor device having an isolating groove and method of making the same. |
摘要 |
<p>A semiconductor structure comprises a gate-turn-off thyristor region (GR) and a diode region (DR) with an isolation area (SR) therebetween. The isolation area is provided with a multistage groove (30) having step structures (34,35). The multistage groove is formed through a two-stage etching process, and over-etched regions in the bottom corners of the multistage groove are relatively shallow ones. This structure is effective for increasing the breakdown voltage of the semiconductor structure and isolations between a the gate-turn-off thyristor region and the diode region. <IMAGE></p> |
申请公布号 |
EP0461879(A2) |
申请公布日期 |
1991.12.18 |
申请号 |
EP19910305303 |
申请日期 |
1991.06.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOKUNOH, FUTOSHI |
分类号 |
H01L29/06;H01L29/74;H01L29/744;H01L21/332;H01L21/76;H01L21/764 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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