| 摘要 |
The present invention is directed to tungsten halogen phosphine complex compounds having the formula W(PX3)6-nLn wherein X is fluorine or chlorine, L is molecular nitrogen, acetone or other ketones or aldehydes, carbon monoxide, acetonitrile or other nitriles, diphenylethine or other ethines, diethylether or tetrahydrofurane or other open-chained or cyclic ethers, benzene or other aromatics, ethene or 1,5-cyclooctodiene or cycloheptatriene or other mono, di, or, respectively, triolefines, whereby two single-tooth ligands L can be replaced by one mu 4-ligand or three single-tooth ligands L can be replaced by one mu 6-ligand and n is a whole number from 0 to 5, as well as methods for the manufacture thereof. These substances are easily volatile in a vacuum and can be decomposed at extremely low temperatures and are therefore extremely well suited for CVD depositions in semiconductor technology, particularly, as via hole fillers in VLSI circuits.
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