MOS gated bipolar transistor,申请号US19910668249-传众专利搜索

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发明名称	MOS gated bipolar transistor
摘要
申请公布号	US5072268(A)	申请公布日期	1991.12.10
申请号	US19910668249	申请日期	1991.03.12
申请人	POWER INTEGRATIONS, INC.	发明人	RUMENNIK, VLADIMIR
分类号	H01L29/78;H01L21/8249;H01L27/06;H01L29/739	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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