| 摘要 |
<p>PURPOSE:To obviate the generation of a line defect even if the disconnection between gate lines and source lines and the short circuit between the source lines and the gate lines arises by forming correction gate electrodes facing source electrodes via gate insulating layers and the correction gate electrodes positioned across the adjacent two electrodes. CONSTITUTION:The active matrix of thin film transistors are so formed that respective drain pads D1, D2, etc., can be the bypass passages for the gate line G10 (the same holds true of the other gate lines) in spite of addition of the correction lines 40, 50, etc., and that the correction electrodes 80, 90 etc. along the respective source lines S10, S11 can the constitute the bypasses for the source lines S10, S11. The line defect is prevented by constituting the bypass circuit in this way even if the disconnection of the gate lines G10 to G12 and the source lines S10, S11 or the short circuit, etc., at the intersected points of the gate lines G10 to G12 and the source lines S10, S11 arises.</p> |
