发明名称 DEFFERENTIAL AMPLIFYING CIRCUIT FOR SEMICONDUCTOR DEVICES
摘要 <p>The amplifier has minimized detection and amplification time and maximized amplification gain. The amplifier comprises a first voltage supply unit (1) comprising mos transistors (PT31,PT32), a differential amplifier unit (2) comprising MOS transistors (NT31,NT32) connected to a first and a second connecting node (N31,N32) in series and a NMOS transistor (NT34) connected to a third connecting node (N34), and an inverter (3) comprising MOS transistors (PT33),NT33) having sensor terminals (SA). The output of the differential amplifier unit (2) is inverted rapidly by the inverter (3) to provide stabilized voltage rapidly to the output terminal.</p>
申请公布号 KR910009620(B1) 申请公布日期 1991.11.23
申请号 KR19880016958 申请日期 1988.12.19
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 SUH YOUNG-HO;CHUN TAE-SOO;CHOI HYU-HYUN
分类号 H03F3/45;(IPC1-7):H03F3/45 主分类号 H03F3/45
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