| 摘要 |
A semiconductor memory device comprises a plurality of normal memory cell arrays having a first and a second data state, a plurality of redundant memory cell arrays having a first and a second data state for substituting for the normal memory cell arrays, a plurality of input/output lines, a plurality of complementary input/output lines, a plurality of first control signals for substituting a redundant memory cell array having the first data state for a defective normal memory cell array having the first data state, and a plurality of second control signals for substituting a redundant memory cell array having the second data state for a defective normal memory cell array having the second data state. In the device, a control circuit for transmitting the complementary input/output data to the plurality of input/output lines, and the input/output data to the plurality of complementary input/output data lines according to the circumstances is provided. Accordingly, the yield of semiconductor memory devices can be improved by increasing the potential number of redundant memory cells which can be substituted for defective normal memory cells. |
