| 发明名称 |
Thin film semiconductor device. |
| 摘要 |
<p>A film semiconductor device comprises at least active semiconductor layer (5), inactive semiconductor layer (5), ohmic layer (6) and metal layer (7,8) respectively laminated sequentially one after another on the substrate (G). Electrodes are formed by the ohmic layer and the metal layer. <IMAGE></p> |
| 申请公布号 |
EP0449585(A1) |
申请公布日期 |
1991.10.02 |
| 申请号 |
EP19910302640 |
申请日期 |
1991.03.26 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TAKEDA, SHINICHI;YAMANOBE, MASATO |
| 分类号 |
H01L21/285;H01L21/336;H01L29/417;H01L29/786;H01L31/113 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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