Semiconductor memory device.

摘要

A DRAM comprising word lines parallel to X-axis and bit lines parallel to Y-axis wherein the memory cell consists of a transistor and a stacked-type charge-storage capacitor is disclosed. The storage node electrode of the stacked-type charge-storage capacitor is formed to project on the surface of the silicon substrate a rectangle of which the major sides are oblique to X-axis and Y-axis or a pattern consisting of at least two different rectangles. Thereby the perimeter of the storage node electrode becomes more than that in the prior art. This enables the realization of charge-storage capacitors having larger capacitance value than in conventional DRAM under the same manufacture conditions. This effect is marked under the conditions where the film thickness of the storage node electrode is more than 1/2 of the minimum feature size, and the distance between two adjacent storage node electrodes is equal to the minimum feature size. <IMAGE>