| 摘要 |
PURPOSE:To increase permittivity, to lower varistor voltage, and to increase alphaand resistance to surge by a method wherein the title composition consists of the specific main component and the additive of 0.001 to 10.000 pts.wt. formed by firing the mixture of SrTiO3 and SiO2 at 1200 deg.C. CONSTITUTION:The title composition consists of the main component of 100 pts.wt., containing Si1-xMaxTiO3 (0.001<=x<=0.300) (first component) of 90.000 to 99.998mol%, at least one or more (second component) selected from Nb2O5, Ta2O5, WO3, Dy2O3, Y2O3, La2O3, CeO2, Sm2O3, Pr6O11 and Nd2O3 of 0.001 to 5.000mol%, at least one or more (third component) selected from Al2O3, Sb2O3, BaO, BeO and the like of 0.001 to 5.000mol%, and the additive (fourth component) which is formed by firing the mixture, consisting of SrTiO3 of 32.500 to 60.000mol% and SiO2 of 40.000 to 67.500mol%, at 1200 to 1300 deg.C. As a result, varistor voltage can be lowered, permittivity epsilon and alpha can be increased, and resistance to surge can be increased. |
