DRAM CELL WITH TRENCH CAPACITOR AND BURIED LATERAL CONTACT,申请号EP19900113757-传众专利搜索

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发明名称	DRAM CELL WITH TRENCH CAPACITOR AND BURIED LATERAL CONTACT
摘要
申请公布号	EP0418491(A3)	申请公布日期	1991.09.25
申请号	EP19900113757	申请日期	1990.07.18
申请人	TEXAS INSTRUMENTS INCORPORATED	发明人	SHEN, BING-WHEY;YASHIRO, MASAAKI;MCKEE, RANDY;CHUNG, GISHI;SHIRAI, KIYOSHI;TENG, CLARENCE;COLEMAN, DONALD J., JR.
分类号	H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L27/108;H01L21/82	主分类号	H01L27/04
代理机构		代理人
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