| 摘要 |
PCT No. PCT/FR88/00272 Sec. 371 Date Nov. 15, 1989 Sec. 102(e) Date Nov. 15, 1989 PCT Filed May 31, 1988 PCT Pub. No. WO88/09830 PCT Pub. Date Dec. 15, 1988.The invention relates to a process for etching a substrate with the aid of a gas plasma produced either by ultra-high frequency waves, or by ultra-high frequency and radio-frequency waves. In this process, the gaseous medium used for the formation of the plasma comprises at least one non-carbon-containing fluorinating gas such as SF6, at least one rare gas such as Ar and at least one non-carbon-containing oxidizing gas such as oxygen, as well as optionally another gas such as nitrogen. The invention is more particularly usable in the microelectronics field.
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