| 摘要 |
<p>An electron-wave coupled semiconductor device 10, in particular a semiconductor switching device, comprises a first layer 14 of semiconducting material having a first bandgap, and a second layer 16 of material formed on said first semiconducting layer 14 and having a second bandgap greater than the first said bandgap. First and second electron waveguides 34,36 are formed alongside but spaced apart from each other in the first semiconducting layer 14 adjacent the boundary between this layer and said second layer 16. A gate region 32 extends over said second layer 16 transverse to and over said electron waveguides 34,36. First contact means E1,E3 provides input connections to said first and second electron waveguides 34,36 on one side of said gate region 32 and further contact means E2,E4 provides separate output connections from said first and second electron waveguides 34,36 on the opposite side of the gate region 32 from said first contact means E1,E3. The dimension of the electron waveguides 34,36 under said gate region 32, both along and transverse to said electron waveguides 34,36, and also the dimension between said electron waveguides 34,36 are smaller than the elastic mean free path for electrons at the operating temperature of the device 10. A signal applied to the gate region 32 can be used to switch a signal applied to said input contact means E1,E3 selectively to a selected one of the output connections E2,E4. <IMAGE></p> |
