| 摘要 |
PURPOSE:To form a resist pattern easily onto a substrate having high stepped difference by forming a dummy resist in the same thickness as the depth of a stepped section in a trench, conducting thermal shrinkage through baking and performing photoengraving for forming the resist pattern. CONSTITUTION:In a method in which a resist pattern having high accuracy is formed onto a substrate 1 having high stepped difference, the pattern of a resist 4 is shaped in thickness equal to the depth of a stepped section in a trench, thermal sag is generated through baking, a surface cured layer is formed and flattened 5, and the original resist pattern is formed through the coating of a resist 2, exposure and development. The substrate 1 having the stepped section is coated with the photo-resist 4 in the same thickness as the depth of the stepped section, and the resist pattern is shaped only inside the trench through mask alignment and development. Thermal sag is generated through baking for approximately three min at 160 deg.C. The surface cured layer is formed through ultraviolet curing, and the resist 2 for forming the resist pattern is applied. |
