发明名称 PATTERN FORMATION
摘要 PURPOSE:To prevent a photoresist film of one side of a substrate from being sensitized by ultraviolet rays applied from the other side of the substrate by using a transparent conductive film with permeability of not more than 50%. CONSTITUTION:Transparent conductive films 12 with permeability of not more than 50% for ultraviolet rays of 250-700mm. wavelength band are formed on a transparent substrate 2a and are coated by photosensitive resin 13a, 13b. Exposure masks 14a, 14b are formed on both surfaces and the photosensitive resin is pattern-exposed by ultraviolet rays of 250-700mm. wavelength band and is developed. Then the transparent conductive films are etched using the photosensitive resin 13a, 13b as masks and the photosensitive resin is removed. With above method the rays applied from one side of the substrate do not sensitize the photoresist film on the other side, so that both sides can be exposed at the same time and the operation rate of equipments can be improved.
申请公布号 JPS57102015(A) 申请公布日期 1982.06.24
申请号 JP19800177266 申请日期 1980.12.17
申请人 HITACHI SEISAKUSHO KK 发明人 AOKI KEIICHI;WAKUI MASATERU
分类号 H01L21/30;G02F1/1343;G02F1/1347;G03F7/20;G03F7/36;G09F9/46;H01L21/027 主分类号 H01L21/30
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