LIQUID CRYSTAL MEMORY DEVICE

摘要

PURPOSE:To produce halftone in a defectless state by constituting the above device in such a manner that the memory capacity in the memory state of a ferroelectric liquid crystal layer can be controlled by changing the conductance of an active type semiconductor element according to input signals. CONSTITUTION:This memory device is so constituted that the memory capacity in the memory state of the ferroelectric liquid crystal layer 1 can be controlled by changing the conductance of the active type semiconductor element 51 according to the input signals. The charge at the boundary of the ferroelectric liquid crystal is controlled by changing the conductance of the active type semiconductor element 5 according to the input signals to allow the control of the memory capacity successively from a high value to lower values. The memory of halftone is executed by applying a prescribed signal voltage to transparent electrodes 5 and applying an electrical input signal or optical input signal in synchronization therewith.