| 摘要 |
PURPOSE:To decrease the number of stages of a resist process and to enhance the yield by silylating a prescribed resin applied on a substrate and exposing the resin and then subjecting the resin to anisotropic etching. CONSTITUTION:The resin compsn. 6 for silylation is applied on the semiconductor substrate 1 and is prebaked. After the resin is silylated by using a silylating agent (e.g. hexamethylene disilazane), the resin is exposed with patterns. Proton 8 is generated and the silyl groups are dissociated in the exposed parts by the exposing. The proton is not generated in the unexposed parts. Anisotropic etching is then executed to form resist patters of a positive type. The compsn. contg. the cocondensation product of m-cresol/p-cresol and formaldehyde and 4, 4'-di-t-butyl diphenyl iodonum chlorophosphate is usable for the compsn. 6. |
