| 摘要 |
<p>PURPOSE: To provide a device with very swell parasitic capacity by continuously depositing a gate insulating layer, a thick a-Si: H layer, and a top part passivation layer. CONSTITUTION: A gate 4 of a transistor is formed on a glass substrate or other substrates. The gate 4 has thickness of, for example, 200nm and preferably made of tantalum. Then by the RECVD method, a gate-insulating layer 6, an a-Si: an H layer 8, and a top part passivation layer 10 are continuously deposited within the same pump-down time. Both the gate insulating layer 6 and the top part passivation layer 10 can be of silicon nitride or silicon dioxide. The thickness of the gate-insulating layer 6 is 200nm-300nm, while that of the active layer 8 is 100nm-300nm. The thickness of the top part passivation layer 10 is close to 300nm. Then, on the passivation layer 10, a photoresist layer 12 is deposited.</p> |
