| 摘要 |
<p>PURPOSE:To enable the selective melting of thin film fuses in a semiconductor IC by the emission of a laser beam thereto by forming the fuses in a double layer structure on a light transmitting insulating substrate. CONSTITUTION:Thin film fuses 13 made of at least one of polycrystalline Si, Al, Mo silicide, Ni-Cr alloy or Ti series alloy are formed via an insulating film 12 on a light transmitting insulating substrate 11. The film 12 is formed over the fuses 13. Thin film fuses 14 made of the same material as above is formed on the film 12. In the semiconductor device of this structure, a laser beam X is emitted from the opposite side of the substrate 11 to selectively fuse the fuses 14, and a laser beam Y is emitted from the side of the substrate 11, and the fuses 13 can be selectively fused.</p> |
