| 摘要 |
<p>PURPOSE:To maintain defect density low, and to obtain excellent element characteristics by previously manufacturing an active layer dominant to light emitting characteristics and a clad layer in superior controllability. CONSTITUTION:The active layers of N type GaAs are grown on an epitaxial wafer 20 by carbon sliding boats while lowering the temperature up to room temperature from 800 deg.C. The epitaxial surface is coated with resin, the GaAs substrate 1 is removed by the etchant of ammonia and peroxygen, the resin is removed, and SiO2 films are formed at both ends of the epitaxial layer. The SiO2 films 5 at the clad layer 2 side are removed in predetermined circles so as to conform to the circular patterns 10 of Ga1-XAlXAs. Selective diffusion layers 6 are shaped, Mo and Au are evaporated and a P side electrode 7 is molded. Au-Ge is evaporated onto GaAs Cap layers 30 at the surface side, while N side electrodes 8 are formed through heat treatment, and the LED is shaped.</p> |
