VERFAHREN ZUM BONDEN VON HALBLEITERSUBSTRATEN

摘要

In semiconductor substrate bonding by oxidn., in the oxidising atmos. of a high temp. process, of two contacting substrate surfaces, at least one of which can have an insulaton layer, the novelty is that groove-like recesses, which extend from the wafer edge, are formed in at least one of the substrate surfaces prior to forming the SiO2 insulaton layer. USE/ADVANTAGE - The process is used to form SDI substrates e.g, for prodn. of fully dielectrically insulated semiconductor devices. The recesses ensure spreading of the high temp. process atmos. in the region between the substrate wafer surfaces and thus enusre universal uniform bond front propagation.