发明名称 Method of patterning resist
摘要 A CAD driven photoplotter selectively exposes a photographic imaging layer without affecting the underlying UV sensitive resist on a substrate to make a printed wiring board, for example. The image layer is developed on the board and used as an in situ mask for the underlying UV resist during exposure to UV. After UV exposure, the image layer is peeled off to allow conventional processing of the resist. The in situ mask is preferably applied in the form of a baseless, high contrast, high gamma emulsion layer bonded to the protective cover sheet over the uncured resist. To facilitate application, the emulsion layer is carried by a release paper which is removed before photoplotting. After UV exposure, the cover sheet and emulsion layer are integrally peeled from the resist.
申请公布号 US5015553(A) 申请公布日期 1991.05.14
申请号 US19900489789 申请日期 1990.03.05
申请人 THE FOXBORO COMPANY 发明人 GRANDMONT, PAUL E.;LAKE, HAROLD
分类号 G03F7/095;H05K3/00;H05K3/06;H05K3/10;H05K3/28 主分类号 G03F7/095
代理机构 代理人
主权项
地址