| 摘要 |
PURPOSE:To obtain an LED to luminesce a remarkably bright blue color by a method wherein a P-N junction between an N-type 6H-SiC epitaxial crystal layer and a P-type 4H-SiC epitaxial crystal layer is provided in a blue light- emitting diode element composed of a hexagonal silicon carbide. CONSTITUTION:An N-type 6H-SiC epitaxial crystal layer 12 and a P-type 4H-SiC epitaxial crystal layer 11 are crystal grown in order on an N-type 6H-SiC crystal substrate 13 to form a P-N junctions. Holes injection through the crystal layer 11 are drifted to the region of the N-type layer of the P-N junction and at the same time, electrons injected through the crystal layer 12 are confined in the vicinity of the N-type layer of the P-N junction by an electron barrier of about 0.2eV. As a result, a blue emission spectrum luminesces in the region of the N-type layer that the spectrum is easy to transmit and it becomes possible to lead out efficiently a blue color to the outside. |
