发明名称 Semiconductor device
摘要 A semiconductor device (1) in which a heat-bondable cured silicone (7) is applied and heat-bonded to the surface of only a predetermined principal portion of the semiconductor device so as not to contact bonding wires (3), flip chip solder portions (8) or beam leads, in order to protect the surface of the principal portion, and a seal layer (6) or (10) is provided after the heat bonding of the cured silicone. The cured silicone (7) is preferably in the form of a film, and a heat-resistant base material (12) may be laminated to one side of the cured silicone. Breaking of bonding wires (3), cracking of solder portions (8) and separation of beam leads do not occur because only the portion to be protected can be protected by coating with the cured silicone (7) and the portion not to be protected is not so coated. Moreover, sisnce there is no contamination caused by a silicone exhalation, the occurrence of a defective bonding and the separation of a sealing resin can be prevented. The seal layers (6 ) and (10) are each constituted by a hermetic seal or a resin seal.
申请公布号 US5008733(A) 申请公布日期 1991.04.16
申请号 US19880161164 申请日期 1988.02.26
申请人 TORAY SILICONE COMPANY, LIMITED 发明人 MINE, KATSUTOSHI;MORITA, YOSHITSUGU;MIYAMAE, SATOSHI
分类号 H01L23/29;H01L21/60;H01L23/057;H01L23/31;(IPC1-7):H01L23/28;H01L23/30 主分类号 H01L23/29
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