| 摘要 |
PURPOSE:To efficiently manufacture a mask for X-ray exposure at a high yield rate by a method wherein the etchant fed by a liquid feeding means is jetted out upward from a nozzle, and a silicon substrate is etched from the lower side. CONSTITUTION:First, a substrate 10 is set on a substrate holder 12 as follows. An O-ring 11, the substrate 10 with the side of an absorber film 3 (or a mask pattern 3A) facing upward, and a press plate 12b are laminated successively and placed on a substrate holder main body 12a, and the substrate 10 is fixed by driving a screw 12c. An etchant 5 is spouted out like a shower from the jetting hole 17a of a nozzle 17 by a liquid conveying device 16 while the above- mentioned substrate holder 12 is being rotated by a rotational mechanism, and the exposed section of a silicon substrate 1 is etched using a supporting ring 4 as an etching mask. The etchant 5, which is heated up a little by reacting to the silicon substrate 1, drops to the bottom part of a container 14, the etchant 5 enters a liquid-temperature adjusting vessel 15 through a drain 14a and used for etching again. The etchant 5 in the liquid-temperature adjusting vessel 15 is adjusted in such a manner that it becomes the prescribed temperature at all times. |
